Collaborative Effort within the GATE MURI

  • Kong & Dresselhaus
    • MATERIAL GROWTH AND EDGES
      • Crystallographic etching
      • CVD graphene electrical characterization
      • TEM & Raman characterization
      • Edge and bulk annealing
  • Yacoby
    • TECHNOLOGY AND PHYSICS
      • He-ion ultrahigh resolution patterning
      • Characterization of graphene-oxide interface
      • Quantum coherent devices
  • Castro Neto
    • SIMULATIONS
      • Influence edge disorder
      • Coulomb interactions in nanoribbon devices
      • Disorder and mid-gap states in bilayer graphene
  • Palacios
    • DEVICES AND APPLICATIONS
      • Graphene on different dielectrics
      • Graphene detection on arbitrary substrate and transfer techniques
      • Design graphene devices using non-linear and bipolar characteristics
  • Strano
    • TECHNOLOGY AND DEVICES
      • Chemical reactivity & functionalization of graphene edges
      • Graphene passivation
  • Jarillo-Herrero
    • TECHNOLOGY AND PHYSICS
      • Ni crystallographic etching
      • Bilayer devices and bandgap opening
      • Bottom-up and Top-Down fabrication