Graphene Ambipolar Electronics

Prof. Tomas Palacios, MIT

• Graphene FET (GFET) for THz:
  • High mobility and carrier velocity
  • Excellent electrostatic control
• GFET frequency multipliers:
  • High spectrum purity ~94% and low noise without filtering demonstrated at 40 MHz
• GFET zero-volt RF detector:
  • High efficiency detector and energy harvesting devices
• GFET mixers:
  • High efficiency and low intermodulation distortion

Our research participation in the GATE program:

• Improve Graphene FET fabrication technology
• Develop new graphene ambipolar devices: graphene ADC, graphene frequency multipliers, graphene mixers and zero-volt RF detectors
• Understand frequency limits in graphene devices

Collaborative Effort within the GATE MURI:
DEVICES AND APPLICATIONS

• Graphene on different dielectrics
• Graphene detection on arbitrary substrate and transfer techniques
• Design graphene devices using non-linear and bipolar characteristics