Structure of the GATE MURI Effort
- Graphene Devices for Future THz Electronics
- THz Generation
- Advanced Transistors
- Interconnections
- Optoelectronics & Plasmonics
Graphene Growth & Characterization
- CVD growth of graphene wafers
- SET microscopy for defect characterization
- Ultra-high mobility
Graphene Technology, Bandgap Engineering and Defect Passivation
- Atomically-defined graphene edges
- Sub-10-nm nanoribbons
- Edge and defect healing by Joule annealing
- Graphene flakes on any substrate
Theoretical Modeling and Device Simulation
- Effect of disorder in nanoribbons
- Graphene device simulator
Educational and Industrial Impact
- 11 top-notch PhD students ready to engage in national labs and industrial research
- Boston-area Carbon Nanoscience (BACON) meetings
- Technology transfer and collaboration with IBM, Raytheon, and Naval Research Laboratory