I have taken this from a discussion in my local lab mail. I haven't
seen a good answer yet. This is the query......
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I have a brief question on Si cleaning procedure for you all. For cleaning
Si substrates that are used for thin film deposition, I've been using the
following procedure: acetone first, followed by methanol and then a DI
rinse (abbreviated as A/M/DI). In some circumstances, I will dip the Si in
BOE (after the A/M/DI clean) and then rinse with DI water.
A colleague of mine uses a slightly different sequence: A/DI/M and he
suggests that this results in a cleaner Si surface. We both agree that the
acetone is relatively dirty but we disagree on the methanol cleanliness.
I'm certain there is a reason that we use the A/M/DI procedure; is there
any experimental evidence that indicates that one procedure is cleaner than
the other?
Any info and/or references are greatly appreciated.
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David E. Barnes
Microfabrication Facility Manager
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