Photoresist Adhesion problem

From: Franco Cerrina (cerrina@xraylith.wisc.edu)
Date: Thu Oct 12 1995 - 15:23:36 EDT


We are trying to use Shipley's SAL 605 to perform electron beam
lithography on GaAs and mixed compounds. During development, the
finest lines (at 0.5 um and below) lift off. We have tried various
things, with no luck. Does anyone have a good recommendation on:

1. High-resolution negative resist for GaAs, ideally SAL 605.

2. Any other comments to offer on improving resist adhesion to III-V
materials.

Thanks,

Franco Cerrina



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