Labnet subscribers:
I would very much appreciate recieving some feedback for the following
problem I am having with regard to CMOS processing. Our facility is devel-
oping a detection circuit which employs CMOS in silicon, together with a
a III-V epi to be done outside our lab in another facility, and we are
having a problem with metalization. Al alloys (pure Al, Al-Cu, Al-Cu-Si)
will not be acceptable due to the high temperatures the wafers will be sub-
jected to during thin film deposition after leaving our fab (up to 800 C).
Some wafers were prepared using tantalum silicide for metalization, but
thermal stress caused the TaSi to peel away from the LTO passivation film on
every occasion after a trial anneal process. Our metalization takes place
with the use of a magnetron D.C. sputtering system, and we have ruled out
allowing III-V compounds to be processed in our facility, so the metalization
must be able to withstand the high temperatures within the III-V chamber.
If anyone has experience with the use of high-temperature resistant metal-
izations which may be compatible with our processing as given above, I would
be grateful for any suggestions.
Sincerely,
John Koons
-- ----------------------------------------------------- John M. Koons *NJIT Microelctronics Research Center* e-mail: jmk4336@hertz.njit.edu -----------------------------------------------------
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