Hello, I have been told that this address is a mailing list for
fabrication facilities. I am looking for a fab that can deposit a CVD
oxide on several small silicon samples. Basically I am looking for a film
of similar quality to that used as an inter-metal dielectric.
The oxide should have the following properties:
- 2.5 um thick,
- high-conformality,
- TEOS based (if possible)
- low pin-hole density,
- low temperature ( < 400C ),
- compatible with aluminum (no RCA clean), and
- low particulates.
I have been looking for a TEOS system, but I'm open to
alternatives. I have a half-dozen small samples that are roughly 1-2cm by
2-3 cm in size. The samples have completed ICs on them-including aluminum
metallization. I would need to FedEx the samples to the fab, have them
deposited and have them FedEx'd back. Finally, I would need to arrange
the deposition for sometime in the next week or so, and to have them
returned in a couple days.
I have access to a SiH4/N20 based-PECVD system with particulate
problems, and have not had the best results. I need the oxide for use as a
mask layer for a deep silicon MEMS etch and the particulates and the poor
conformality of SiH4 PECVD have caused pin-holes in the mask layer. Hence,
I am looking for low-particulate, high-conformality deposition system.
I will only need one run. Though if suitable arrangements can be
made there other researchers here (as well as myself), who might be
interested in regular depositions.
Thank you,
Kevin Shaw
Graduate Student
Electrical Engineering Dept.
Cornell University
shaw@cnf.cornell.edu
###########################################
Kevin A. Shaw
Phillips Hall #115
Cornell University
Ithaca, New York, 14853
shaw@cnf.cornell.edu
kshaw@ee.cornell.edu
(607) 255-3926
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