Hello,
Does anyone know of references on photoresist polymerization on sidewalls?
Klaassen et al. (Kovacs' group at Stanford) reported that "Polymerization of
the photoresist mask on the sidewalls of the etched trenches slows the lateral
etch rate and allows high anisotropy" [in "Silicon fusion bonding and deep
reactive ion etching; a new technology for microstructures", 8th International
Conference on Solid State Sensors and Actuators]. -- But no reference is given.
I'm interested in a *study* that proves or strongly supports this seemingly
general observation.
Thanks in advance,
Albert Folch
Microsystems Technology Laboratories
Massachusetts Institute of Technology
-- Shriners Burns Institute http://web.mit.edu/afolch/www/
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