What are you trying to find out? AFM shows the roughness of a
surface, so if you polish it you change the roughness. What substrate are
the epi layers on? If they are on Si and the layers are really
epitaxial, you should be able to get a very smooth, if somewhat
unpredictable, cleave plane to look at. Have you tried the
polishing techniques to make TEM samples? There is a wonderful TEM lab on
the first floor of building 13, and the lab manager or Prof. Reif should
be able to give you some guidance. If you want to differentiate between
the Si and the SiGe layers, RCA, SC1 etches SiGe faster than Si. The etch
rate is approximately exponential with Ge content.
On Wed, 13 Oct 1999, Katalin Voros wrote:
> If yes, pls reply to Paul directly, cc me.
> Thank you.
> Date: Tue, 12 Oct 1999 20:50:18 -0700
> From: paul rosenthal <firstname.lastname@example.org>
> To: "email@example.com" <firstname.lastname@example.org>
> Subject: Cleaning Si/SiGe cross-sections
> I am trying to section and polish Si/SiGe epitaxial layers for
> cross-sectional AFM measurements and am having trouble obtaining a clean
> surface after polishing. I Have tried several techniques without much
> success. Any ideas are welcome.
> Thanks in advance,
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