We have a Karl Suss MJB 3 in our lab and we easily get 2-micron by 2-micron
patterns using AZ 5214 photoresist. Our photoresist is about 1.3 microns
thick after spinning and we expose our patterns for 5.5 seconds with a
constant intensity of 13.5mw/cm2 while monitoring the 405nm wavelength.
Other labs I've been in have been able to define 0.8micron lines using the
same aligners and resist.
The manual I have for the aligner states that 1-micron patterns can be
obtained, but that small patterns depend on the skill of the operator as
well as the exposure tool.
Beth Fuchs
Research Engineer
Center for High Technology Materials
University of New Mexico
1313 Goddard SE
Albuquerque, NM 87106
(505) 272-7844 office
(505) 272-7801 fax
bfuchs@chtm.unm.edu
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