We have the same Karl Suss MJB 3 here at IIT Bombay, INDIA.
The smallest pattern we have got here is 8 micron by 8 micron using
Shipley 1400 PPR.
You would need to get your lithography parameters right to achieve a
better resolution. From my experience, it does not look like limitation
of the aligner.
Regards and good luck,
On Sun, 15 Apr 2001, Yiping Lin wrote:
We have a Karl Suss mask aligner MJB 3, and the smallest pattern we could
get is 20x20 micron. For 10x10-micron patterns, they either disappear
after developing or don't look good. I would like to know how small
feature you can get with MJB3 and how to do it. If someone can share his
experience, I will appreciate it very much.
Here is our processing:
The photoresist we use is Shipley 1813, and the spin speed is 3000 rpm for
30 sec. Our sample is very small, ~ 1 cm2. There is a tiny scratch in the
front lens, so we don't use it right now (The technician from Karl Suss
said it is OK). The power intensity is set around 3 mW/cm2 ( not in
the control mode; if it is in control mode, the power intensity is 6
mW/cm2). Expose for 20 sec, and develop in MF-319 for 15-20 sec. The
thickness of photoresist is roughly 1.65 micron.
Yiping Lin (Yiping.Lin@sunysb.edu)
Department of Physics and Astronomy
State University of New York at Stony Brook
Stony Brook, New York 11794-3800, USA
Phone: 1-631-632-9654; Fax: 1-631-632-8774
Ashutosh Shastry Research Associate,
Graduate Student, Microelectronics Group,
School of Biosciences and Electrical Engineering Dept.,
Phone: 091-22-5721791 I.I.T. Bombay, INDIA 400 076.
Email: firstname.lastname@example.org Phone:091-22-5723655
O Traveller, there is no such thing as PATH...
.....paths are MADE by walking.
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