Hello,
I want to wet etch (remove completely) and Al mask deposited on
In(0.75)Al(0.25)As. I used H3PO4 15% diluted in water, but the etch rate
is too slow. I am aware of the mixture 3:3:1:1 H3PO4:HNO3:CH3COOH:H2O.
Any special precautions when preparing this solution? Any special order
in the preparation? Do you have another solution that might do the job,
keeping in mind that I don't want to etch the semiconductor surface?
Thanks a lot for your help.
Fernando Camino
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