I am considering to sputter the Cu on Silicon, with the Cr as adhesion
layer. The silicon will be thermal oxided 100 nm at first.
With my knowledge, the adhesion of copper evaporated on silicon is very
poor. Sometimes even with Cr as the intermediate layer, there are some
problem either with the poor adhesion between the copper and the
chromium (with breaking vacuum to change the evaporation sources), or
with poor adhesion between the chromium and the silicon (without breakig
vacuum).
Did anyone have the experience that the thermal oxide layer would help
to the adhesion? Will there are any possible problems and suggestions
for the process which I prepare to do? Thank you.
Yan Cheng
University of Kassel, Germany
Email: ycheng@hfm.e-technik.uni-kassel.de
<mailto:ycheng@hfm.e-technik.uni-kassel.de>
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