I am looking to improve upon our fiducial layer for AlGaN-based devices....we currently use a multi-level stack of Ti (adhesion), SiOx, Ti (adhesion), then Gold. This stack was selected because it stays sharp after 800-900 deg. C. ohmic anneal. The function of the dielectric is to keep the metal layers from mixing or spreading along the surface (at least that is my understanding). Does anyone have an all-metal stack that will serve the same purpose? We certainly don't want to put any dielectric in our e-beam evaporator!
The gold needs to remain sharp throughout the high-temp anneal--it will contain the alignment marks for e-beam writing.
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This archive was generated by hypermail 2b29 : Tue Mar 09 2004 - 07:49:08 EST