Dear Labnet Users:
The left hand chamber on our Unaxis ICP system is used to etch SiOx,
compound semiconductors (including Ga-containing alloys) polymers, BCB, and
other materials. One of our CMOS customers is using that same chamber for
etching vias through SiOx down to Si for source and drain contacts. He is
concerned that there might be Ga contamination that would ruin his
devices. Perhaps one of you could help answer these questions:
[1] Is it likely that there could be some Ga contamination from residual Ga
in the chamber?
[2] If so, would it be detectable by SIMS?
[3] Is there an upper limit to acceptable Ga contamination in a CMOS device?
[4] If so, is SIMS capable of detecting this level of Ga in Si? If not, is
there another suggested method to detect Ga?
Thanks
kpm
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