IAB Member Profile

Ghavam ShahidiGhavam Shahidi
Director of Silicon Technology, IBM Fellow
Research Division

Dr. Shahidi received his B.S., M.S., and PhD. degrees, all in electrical engineering, from MIT. In 1989 he joined the IBM Thomas J. Watson Research Center, where he initiated the SOI development program. In 1993, he moved to the IBM Microelectronics Division Advanced Silicon Technology Center (ASTC) in Hopewell Junction, New York. Over the following years, Dr. Shahidi led the development of SOI CMOS technology at the ASTC. This work resulted in the first mainstream use of SOI. Later as the Director of High-Performance Logic Development in IBM Microelectronics, he lead the development of multiple CMOS technology generation. In 1993 he moved to IBM Research Division, where he is currently the Director of Silicon Technology and an IBM Fellow.

Microsystems Industrial Group

MTL Annual Research Report 2017: View Online