MTL News

MTL Students, Alumni, and Faculty Win at IEDM 2015

December 15, 2015

IEDM is the premier conference in electron devices and it is a great honor to receive these awards at the plenary session.

Two prestigious awards were received by MTL students, alumni, and faculty at the plenary session of the 2015 International Electron Devices Meeting (IEDM) that took place in Washington, DC in early December.

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Left to right: Dimitri Antoniadis, Jianqiang Lin, Jesús del Alamo.

Jianqiang (Jerome) Lin received the 2014 Roger A. Haken Best Student Paper Award. This award is given to the best student paper presented at the previous year's IEDM conference. "This is an extremely competitive award. Jerome carried out his PhD thesis under the supervision of Prof. Antoniadis and myself," noted MTL Director Prof. Jesús del Alamo. Jerone's paper at IEDM 2014 was titled "Novel Intrinsic and Extrinsic Engineering for High-Performance High-Density Self-Aligned InGaAs MOSFETs: Precise Channel Thickness Control and Sub-40-nm Metal Contacts." Jerome is now a postdoc at Argonne National Laboratory.

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Left to right: Winston Chern, Jamie Teherani, and Pouya Hashemi.

Additionally, Winston Chern, Pouya Hashemi, James Teherani, Dimitri Antoniadis, and Judy Hoyt received the 2015 IEEE Electron Devices Society George E. Smith Award. This award is given to the best article published in IEEE Electron Device Letters in 2015. EDL is a prestigious, fast publication journal where leading research in electron devices is published. The winning paper is titled "Record Hole Mobility at High Vertical Fields in Planar Strained Germanium on Insulator with Asymmetric Strain." Winston is a current student with Profs. Antoniadis and Hoyt. Jamie is now on a tenure track at Columbia University and Pouya is now with IBM T. J. Watson Research Center.

"The research that is being honored was carried out in MTL. We should all be very proud of the quality of the research that takes place in our lab," noted Prof. del Alamo

--Microsystems Technology Laboratories


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