To: CMP Community
Date: November 29, 1996
Subject: Release 1.0 of CMP Characterization Mask Set
We are pleased to announce the first release, Version 1.0, of the CMP
Characterization Mask Set. We are making these layouts available to
the CMP equipment, supplier, and user communities who wish to
understand and optimize polish and planarization dependencies as a
function of patterns, consumable or equipment sets, and process
conditions.
Purpose:
The mask set has been designed for the rapid exploration and
characterization of the following layout or pattern factors in the CMP
of dielectric or other layers: pattern density with similar pitch,
raised area, pitch with constant density, and perimeter/area
ratio. For each of these, a dedicated die layout has been defined with
pattern characteristics taking on a range of values (e.g. pattern
densities from 4% to 100%). Each layout consists of a single
lithographic layer, and can be used with short-flow wafer fabrication
and polishing.
Contents of this Release:
- CMP Characterization Mask Set Documentation Version 1.0 (11/25/96). 55 pages.
- Mask layouts (I-IV) in GDSII format
- Mask layouts (I-IV) in CIF format
The documentation (with appendix) provides detailed information about
each mask and all structures on the masks, recommendations for
metrology, and a sample analysis to illustrate the use of measurement
information for rapid modeling and characterization of CMP.
The release is being made available via the World Wide Web (www). So
that we may track technology transfer, we request that you
contact us
for the username/password in order to access the distribution. The URL
for the distribution is
Masks
If you do not have internet or web access or require an alternative
distribution mechanism, please contact us. We can be reached
by email; send to boning at mtl.mit.edu.
Participants:
The primary resources for this effort are drawn from MIT (Duane
Boning, Jim Chung, Brian Stine, Rajesh Divecha, Dennis Ouma), Sandia
National Laboratories (Dale Hetherington), Hewlett-Packard (Sam
Nakagawa), and IPEC/Planar (Randy Harwood, Dennis Shy). The above
individuals and other participants from these organizations have
contributed test structure design expertise, mask layout, mask
fabrication, experimental wafer fabrication and measurement resources
to test these masks, and analysis methods. We received extremely
useful feedback from many expert reviewers in the industry on earlier
drafts of the mask set, and we sincerely thank all of these
contributors for their insight and comments.
Feedback:
We are interested in potential modifications or enhancements to the
characterization mask set design. Future designs and releases are
envisioned, and will benefit from community experience using these
masks.
Primary Points of Contact:
Prof. Duane Boning
MIT, Room 39-567
Cambridge, MA 02139
Ph: 617-253-0931 Fax: 617-253-9606
Email: boning at mtl.mit.edu
Prof. James Chung
MIT, Room 39-415
Cambridge, MA 02139
Ph: 617-253-0928 Fax: 617-253-7393
Email: chung@mtl.mit.edu
Dr. Dale Hetherington
Sandia National Labs
Albuquerque, NM 87185-1084
Ph: 505-844-6155 Fax: 505-844-2991
Email: dlhethe@sandia.gov
Last updated November 29, 1996
Copyright © 1996 by Massachusetts Institute of Technology.
All rights reserved.