25-nm-Device Analytic Doping Profile:


The drain n+ doping = Ndoping
Ndoping = Asd * NgaussX * NgaussY
Asd = 2e20 cm^-3
If x > CXn
	then NgaussX = 1
	else NgaussX = exp(-((x - CXn) / JXn)^2)
CXn = 18.2 nm
JXn = 4 nm
NgaussY = exp(-(y / JYn)^2)
JYn = 17 nm

The drain-halo p+ doping = Pdoping
Pdoping = -1 * Ap * PgaussX * PgaussY		(p-type dopants are "negative")
Ap = 2.5e19 cm^-3
If x > CXp
	then PgaussX = 1
	else PgaussX = exp(-((x - CXp) / JXp)^2)
CXp = 18.2 nm
JXp = 18.2 nm
If y < CYp
	then PgaussY = exp(-((y - CYp) / JYp1)^2)
	else PgaussY = exp(-((y - CYp) / JYp2)^2)
CYp = 18 nm
JYp1 = 16 nm
JYp2 = 16 nm

The source n+ and source-halo p+ dopings are the mirror images of these
functions about x = 0.  By simultaneously shifting the CenterX positions of
the source/drain and halo dopings by an amount deltaX, one can stretch the
device such that Leff = 25 nm + 2 * deltaX.