$ SuperHalo NanoMOSFET


assign	name=pdope	n.val=2e20
assign	name=bdope	n.val=1e15

$ physical dimensions
assign	name=Lsd	n.val=0.0575
assign	name=Lgate	n.val=0.085
assign	name=conlen	n.val=0.010

assign	name=Tpoly	n.val=0.060
assign	name=Tox	n.val=0.0020
assign	name=Tsi	n.val=0.120

$ tags
assign	name=xmin	n.val=-@Lsd-@Lgate/2
assign	name=xmax	n.val=@Lsd+@Lgate/2

assign	name=ymin	n.val=-@Tox-@Tpoly
assign	name=ymax	n.val=@Tsi

$ ************************************************************* $

MESH	smooth=1

$ lateral mesh
x.mesh	x.min=@xmin width=@Lsd h1=@Lsd/15 h2=@Lsd/28
x.mesh	width=@Lgate h1=@Lgate/42 h2=@Lgate/42
x.mesh	width=@Lsd h1=@Lsd/28 h2=@Lsd/15

$ depth mesh
y.mesh	y.min=@ymin depth=@Tpoly h1=@Tpoly/3 h2=@Tox/2
y.mesh	depth=@Tox h1=@Tox/2
y.mesh	depth=@Tsi/2 h1=@Tox/2 h2=@Tsi/60
y.mesh	y.max=@ymax h1=@Tsi/60 h2=@Tsi/20

$ un-grid
eliminate	columns
+	x.min=@xmin x.max=-@Lgate/2 y.min=@ymin y.max=-@Tox
eliminate	columns
+	x.min=@Lgate/2 x.max=@xmax y.min=@ymin y.max=-@Tox

$ ************************************************************* $

$ left oxide
region	num=1 oxide	x.min=@xmin x.max=-@Lgate/2 y.min=@ymin y.max=-@Tox

$ gate polysilicon
region	num=2 silicon	x.min=-@Lgate/2 x.max=@Lgate/2 y.min=@ymin y.max=-@Tox

$ right oxide
region	num=3 oxide	x.min=@Lgate/2 x.max=@xmax y.min=@ymin y.max=-@Tox

$ gate oxide
region	num=4 oxide	x.min=@xmin x.max=@xmax y.min=-@Tox y.max=0

$ bulk silicon
region	num=5 silicon	x.min=@xmin x.max=@xmax y.min=0 y.max=@ymax

$ ************************************************************* $

$ contacts
electrode name=drain	x.min=@xmax x.max=@xmax y.min=0 y.max=@conlen

electrode name=gate	x.min=-@Lgate/2 x.max=@Lgate/2
+			y.min=@ymin y.max=@ymin+@conlen

electrode name=source	x.min=@xmin x.max=@xmin y.min=0 y.max=@conlen

electrode name=bulk	bottom

$ ************************************************************* $

$ poly depletion
profile	n-type uniform	n.peak=@pdope region=2

$ background doping
profile	p-type uniform	n.peak=@bdope region=5

$ SuperHalo 2D doping
PROFILE	region=5 in.file=sh.doping 2d.ascii x.col=1 y.col=2 n.col=3
+	y.min=0 y.max=@Tsi x.min=@xmin x.max=@xmax

$plot.2d grid boundary fill

$ ************************************************************* $

contact	name=drain	neutral resistance=0
contact	name=gate	n.polysi resistance=0
contact	name=source	neutral resistance=0
contact	name=bulk	neutral resistance=0


$ models
models lsmmob fldmob bgn fermidir
$ with QM
+ qm.phili qm.method=1 qm.efield=1 qm.norp=-1
$ calibrated mobility
mobility silicon betan=1.250673 vsatn=9.843950e6


$ ------------------------------------------------------------- $

$ bias contacts
assign	name=Vsource	n.val=0
assign	name=Vbulk	n.val=0

assign	name=VGstart	n.val=0
assign	name=VGstep	n.val=0.1


$ loop Vdrain
loop	steps=3
assign	name=Vdrain	n.val=(0.1 0.7 1.2)

assign	name=Vgate	n.val=@VGstart


$ initial solution use Gummel
symbolic gummel carriers=1 electrons
method	iccg damped itlimit=40
solve	V(drain)=@Vdrain V(gate)=@Vgate V(source)=@Vsource V(bulk)=@Vbulk

symbolic newton carriers=1 electrons
method	autonr n.damp
solve	V(drain)=@Vdrain V(gate)=@Vgate V(source)=@Vsource V(bulk)=@Vbulk


$ begin log file of IdVg
log	out.file="ivd"@Vdrain

$ loop for Vgate
loop	steps=13

solve	V(drain)=@Vdrain V(gate)=@Vgate V(source)=@Vsource V(bulk)=@Vbulk

$ increment
assign	name=Vgate	n.val=@Vgate+@VGstep

$ end Vgate loop and close
l.end

log	close


$ end Vdrain loop
l.end