Using MTL » Fabrication

Etch Tool Summary CHART

AME5000   Applied Materials P5000 6”
Ch. A gas size (sccm) notes:  
oxide CHF3 150 quartz clamp ring and cover
nitride CF4 36 Backside He cooling
Ar 140 Leybold NT340M turbopump
O2 100 Edwards DP80 backing pump
cathode 20C
chamber walls 20C
Ch. B gas size (sccm) notes:  
poly Cl2 100 Vespel clamp ring, quartz focus ring
SiGe,Ge HBr 100 Backside He cooling
O2 20 Leybold NT340M turbopump
SF6* 85 Ebara A10s backing pump
NF3* 300 cathode 20C
* gas is plumbed but not used chamber walls 20C
         
         
Rainbow Lam Rainbow 9600 6”
  gas size  (sccm) notes:  
metal BCl3 100 ceramic clamp ring
poly Cl2 200 backside He cooling
oxide N2 20 Seiko-Seiki STP-H1000 turbopump
SF6 30 Ebara A10s backing pump
Ar 200 lower electrode 60C
O2 20 upper electrode 70C
chamber walls 70C
         
         
LAM490   LAM 490B   6” & smaller
1 chamber gas size (sccm) notes:  
nitride C2F6* 200 EBARA A-10S as the process vacuum dry pump
poly O2 50 Edwards E2M18 as the load-lock vacuum pump
Ge He 200 transport arm is C-shaped for 6” wafers
Cl2 200 no backside Helium, or wafer clamp
SF6 200 lower electrode is cooled to 15 C
* gas is plumbed but not used power supply is 600W RF
         
LAM590-ICL   LAM 590 UCB 6” & smaller
1 chamber gas size (sccm) notes:  
oxide CF4 200 high RF power, 850 W, (max 1250)
nitride CHF3 100 graphite top electrode provides C for high ox/Si selectivity
He 200 wafer on the grounded electrode
O2 50 Narrow electrode spacing
Spare 200
         
Plasmaquest   Plasmaquest   4" & smaller
1 chamber gas size (sccm) notes:  
oxide NH3 20 EBARA A-10S as the process vacuum dry pump backing a turbo
Si3N4 SiH4* 100 Edwards E2M18 is the load-lock vacuum pump
poly BCl3 200 transport arm is C-shaped for 4” wafers
PI Cl2 73 no backside Helium, or wafer clamp
parylene SF6 58 lower electrode has a temperature range of 10-80 C
GaN CF4 58 chiller is in the lab
InP H2 268 power supply is 700W
GaAs CH4 200 ECR
Ar 176
N2 200
O2 42
He  139
* gas is plumbed but not used
         
LAM590-TRL   LAM 590 UCB 6” & smaller
1 chamber gas size (sccm) notes:  
oxide CF4 200 high RF power, 850 W, (max 1250)
nitride CHF3 100 graphite top electrode provides C for high ox/Si selectivity
He 200 wafer on the grounded electrode
O2 50 Narrow electrode spacing
Spare 200
         
SAMCO   SAMCO 200iP LL 6” & smaller
1 chamber gas size (sccm) notes:  
GaAs Cl2 20 Ebara EST10N dry pump with Osaka maglev turbopump on chamber
InP BCl3 50 Alcatel Adixen rotary vane pump on loadlock
GaN SiCl4 20 1000W power supply for ICP
GaP Ar 100 300W power supply for bias
GaSb N2 100 6" handler, but have carrier for 4" or pieces
Si CHF3 (cleaning gas) 100 electrostatic chuck
poly O2 100 lower electrode has a temperature range of 50-250 C
backside He cooling
         
         
STS-1   STS   6” & smaller
1 chamber gas size (sccm) notes:  
Si SF6 ? Bosch process
nitride C4F8 ? DRIE
He ? can use handle wafers
allows metal masks
         
         
STS-2   STS   6” & smaller
1 chamber gas size (sccm) notes:  
Si SF6 ? Bosch process
nitride C4F8 ? DRIE
He ? can use handle wafers
         
         
STS-3   STS   6” & smaller
1 chamber gas size (sccm) notes:  
Si SF6 ? Bosch process
nitride C4F8 ? DRIE
He ? can use handle wafers
allows exposed CMOS metal

Fabrication

MTL Annual Research Report 2012: View Online