This chart explains how tool usage in MTL's fabrication facilities will be billed to the user. Units of measure vary by tool. This list is updated several times a year. It is organized by lab (ICL, TRL, and EML). Please note that Javascript must be enabled to make use of all chart functionalities.
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machinechargechart.pdf
| ID | Lab | Process Area | Where | CORAL Name | It is: | It does: | Maker/Model | Units | per:(self-run) | if staff |
|---|---|---|---|---|---|---|---|---|---|---|
| 1 | EBL | e-beam write | 24-041 | Elionix | 125 keV, hi-res e-beam writer | Elionix F-125 | 7 | hr | 7 | |
| 2 | EML | wet | pecvd-rie | acid-hood-EML | fume hood | acid wet etch | 8 | hr | 12 | |
| 3 | EML | diffusion | metal dep | anneal-furnace | tube furnace | for annealing, sintering, etc | 8 | hr | 12 | |
| 4 | EML | photo | photo | asher-EML | plasma photoresist stripper | 8 | hr | 12 | ||
| 5 | EML | metal dep | metal dep | BalzerSputterer | sputterer | Au | Balzer | 8 | hr + mat | 12 |
| 6 | EML | diffusion | metal dep | Box-Furnace | furnace | anneals, bakes | 8 | hr | 12 | |
| 7 | EML | photo | photo | coater-EML | spinner | coats PR | Solitec | 8 | hr | 12 |
| 8 | EML | metrology | hall | dektak-EML | profilometer | measures surface roughness | Sloan Dektak II | 8 | hr | 12 |
| 9 | EML | metal dep | metal dep | eBeam-EML | metal evaporator | Au,Ag,Al,Cr, AuGe,Co,Pt,Si, Ti,Zr,W,Er,Mo,SiO2, Ta,Pd,Ni,Ge,Sn | Sloan | 8 | hr + mat | 12 |
| 10 | EML | metrology | Resonetics rm | filmetrics | thin film measurement system | measures film thickness | Filmetrics F20 | 8 | hr | 12 |
| 11 | EML | Photo-EML | Au Bonder Rm | hotpress | hydraulic press | applies loads ~100 kN, electrically heats to ~340 C; used on thermoplastic films (eg, PMMA) | Carver 4386 | 8 | hr | 12 |
| 12 | EML | photo | photo | MA4 | mask aligner | contact lithography | Karl Suss MA-4 | 8 | hr | 12 |
| 13 | EML | photo | photo | MJB3-BroadBand | mask aligner | contact lithography | Karl Suss MJB-3 | 8 | hr | 12 |
| 14 | EML | diffusion | Resonetics rm | OxidationTube | tube furnace | wet & dry ox, anneals, bakes | Lindberg | 8 | hr | 12 |
| 15 | EML | metrology | metrology | parametric-tester | parametric-tester | measures device characteristics | Hewlett-Packard | 8 | hr | 12 |
| 16 | EML | wet | photo | photo-hood-EML | fume hood | solvent wet etch | 8 | hr | 12 | |
| 17 | EML | pecvd-rie | pecvd-rie | plasmatherm | dual chamber PECVD-RIE | etches & deposits dielectrics; heated chuck | Plasmatherm | 8 | hr | 12 |
| 18 | EML | diffusion | metrology | RTA-EML | rapid thermal annealer | AG Associates Heatpulse 410 | 8 | hr | 12 | |
| 19 | EML | metrology | metrology | semNeo | inspection SEM | �3" samples, 20kX, ~0.2 um resolution | Joel/Nikon Neoscope JCM-5000 | 8 | hr | 12 |
| 20 | EML | wet | photo | SolventHood-EML | fume hood for solvents, no drain | 8 | hr | 12 | ||
| 21 | EML | metal dep | metal dep | SputtererAJA | sputterer | Al, Cr, Cu, etc | AJA Orion 5 | 8 | hr + mat | 12 |
| 22 | EML | metrology | metrology | wykoEML | non-contact profiler | surface topology; up to 500um vertical scan | Wyko RST | 8 | hr | 12 |
| 23 | ICL | metrology | metrology | 4-pt-probe | resistivity measurement system | 2 | hr | 4 | ||
| 24 | ICL | diffusion | diffusion | 5A-GateOx | atmosph. diffusion tube | for gate oxide, CMOS only | Thermco 10K | 25 | run+steam | 39 |
| 25 | ICL | diffusion | diffusion | 5B-Anneal | atmosph. diffusion tube | for annealing, including Concept1 films | Thermco 10K | 25 | run+steam | 39 |
| 26 | ICL | diffusion | diffusion | 5C-FieldOx | atmosph. diffusion tube | for oxidation | Thermco 10K | 25 | run+steam | 39 |
| 27 | ICL | diffusion | diffusion | 5D-ThickOx | atmosph. diffusion tube | for oxidation, CMOS only | Thermco 10K | 25 | run+steam | 39 |
| 28 | ICL | diffusion | diffusion | 6A-nPoly | low P diffusion tube | LPCVD plysilicon; CMOS only | Thermco 10K | 65 | run+70/um | 74 |
| 29 | ICL | diffusion | diffusion | 6B-Poly | low P diffusion tube | LPCVD thick & P-doped polysilicon | Thermco 10K | 65 | run+70/um | 74 |
| 30 | ICL | diffusion | diffusion | 6C-LTO | low P diffusion tube | LPCVD Low Temperature Oxide | Thermco 10K | 65 | run+70/um | 74 |
| 31 | ICL | diffusion | diffusion | 6D-Nitride | low P diffusion tube | LPCVD stoichiometric Si nitride | Thermco 10K | 65 | run+70/um | 74 |
| 32 | ICL | metrology | photo | AFM | Atomic Force Microscope | surface topology | Veeco D3100 | 9 | hr | 12 |
| 33 | ICL | MOCVD | deposition | ALD | atomic layer dep | atomic layer dep: Al,Hf,Ti ox, TiN | Cambridge Nanotech | 7 | wafer+thickness | 14 |
| 34 | ICL | MOCVD | deposition | ALD-Oxford | plasma-assisted atomic layer dep | plasma-ALD: Al,Hf,Ti ox;W,Ti nitr | Oxford FlexAl | 7 | wafer+thickness | 14 |
| 35 | ICL | plasma etch | metallizat'n | AME5000 | plasma etcher | Chamber A: SiO2, BPSG, LTO; Chamber B: Si nitride, poly | AMAT Precision 5000 | 7 | wafer+mat | 14 |
| 36 | ICL | photo | photo | asher-ICL | plasma asher | strip PR | Matrix 106 | 5 | run | 7 |
| 37 | ICL | photo | photo | coater6 | wafer track | coats PR | SVG 8860 | 2 | wafer | 4 |
| 38 | ICL | pecvd | deposition | concept1 | dielectric plasma dep | deposits oxide, nitride, TEOS | Novellus Concept 1 | 7 | wafer | 14 |
| 39 | ICL | metrology | metrology | cv | CV bridge | measures capacitance vs voltage | Boonton | 1 | wafer | 3 |
| 40 | ICL | pecvd | diffusion | DCVD | dielectric plasma dep | deposits oxide, nitride | AMAT Centura 5200 | 7 | wafer+thickness | 14 |
| 41 | ICL | pkg | packaging | diesaw | diesaw | dices wafers | Disco DAD-2H/6T | 3 | wafer+cut | 6 |
| 42 | ICL | metal dep | metallizat'n | eBeamCMOS | metal evaporator | Al, Ir, Pt, Co, W, Er, Ti, Mo, SiO2, Si, Ta | Temescal FC1800 | 30 | run+mat | 37 |
| 43 | ICL | metrology | metrology | ellipsometer-ICL | ellipsometer | measures film thickness & dielectric constant | Gaertner L116BLC-26A | 2 | hr | 4 |
| 44 | ICL | metal dep | AME rm | endura | metal sputtering system | sputters Ti, TiN, Al, AlSi | AMAT Endura | 7 | wafer+mat | 14 |
| 45 | ICL | UHCVD | 39-528 | epi-Centura | Ultra Hi-vac chem vapor dep | grows Si & SiGe epilayers | AMAT Centura 5200 | 18 | hr | 18 |
| 46 | ICL | CMP | CMP | GnP | chemo-mechanical polisher (BPSG, LTO, thermal oxide,nitride, Si) | GnP Poli-400L | 7 | wafer+slurry | 14 | |
| 47 | ICL | pkg | EML Metro | goldwire | gold-ball wire bonder | Kulicke&Soffa 4124 | 7 | hr | 14 | |
| 48 | ICL | photo | photo | HMDS-ICL | bake oven | for hexamethyldisilazane (an adhesion promoter) | Yield.Eng.Syst.3/10 | 0 | wafer | 10 |
| 49 | ICL | photo | photo | i-stepper | wafer stepper | patterns wafers, 5x reduction, 0.5 um resolution | Nikon NSR-2005i9 i-line(365nm) | 6 | wafer | 9 |
| 50 | ICL | wet | packaging | KOH-Au | wet station | Au-bearing KOH & Cu plating | Semifab WPS-400 | 25 | run | 32 |
| 51 | ICL | plasma etch | etching | LAM490B | plasma etcher | for Si & nitride [gases=C2F6,SF6,Cl2,He,O2] | LAM 490B | 7 | wafer+thickness | 14 |
| 52 | ICL | plasma etch | etching | LAM590-ICL | plasma etcher | for oxide [gases=CHF3,CF4,He,O2] | LAM 590B | 7 | wafer+thickness | 14 |
| 53 | ICL | metrology | photo | microscope-ICL | inspection microscope | Nikon Optiphot 88 | 2 | hr | 4 | |
| 54 | ICL | wet | photo | nitrEtch-HotPhos | wet station | wet etches nitride (1st tank) | Semifab WPS-400 | 25 | run | 32 |
| 55 | ICL | wet | photo | oxEtch-BOE | wet station | wet etch oxide | Semifab WPS-400 | 25 | run | 32 |
| 56 | ICL | plasma etch-dep | AME rm | Oxford-100 | plasma etch/dep | for Si, nitride, TEOS [gases=C2F6, SF6,Cl2,He,O2; NH3,SiH4] | Oxford Plasmalab System 100 | 7 | wafer+thickness | 14 |
| 57 | ICL | metrology | metrology | P10 | profilometer | measures surface roughness | Tencor/Prometrix P-10 | 5 | hr | 10 |
| 58 | ICL | wet | packaging | plating-bench | wet station | Au, Ni & Cu plating | Semifab WPS-400 | 25 | run | 32 |
| 59 | ICL | wet | near AME | premetal-Piranha | wet station | for piranha & HF dip | Semifab WPS-400 | 25 | run | 32 |
| 60 | ICL | plasma etch | etching | rainbow | plasma etcher | for metal (Al, Ti) [gases=SF6,Cl2, BCl3,CHCl3,N2] | LAM 9600 | 7 | wafer | 14 |
| 61 | ICL | diffusion | diffusion | rca-ICL | wet station | RCA clean | 25 | run | 39 | |
| 62 | ICL | diffusion | diffusion | RTA2 | rapid thermal annealer | AG Associates Heatpulse 410 | 4 | wafer | 5 | |
| 63 | ICL | diffusion | diffusion | RTA-pieces | rapid thermal annealer | non-Au, accepts �3" wf & pieces | Annealsys | 4 | wafer | 5 |
| 64 | ICL | diffusion | diffusion | RTP | rapid thermal annealer | AG Associates 8108 | 4 | wafer | 5 | |
| 65 | ICL | diffusion | diffusion | RTP-Si | rapid thermal annealer | AG Associates 8108 | 4 | wafer | 5 | |
| 66 | ICL | diffusion | diffusion | SCA | surface charge analyzer | measures surface charge, carrier lifetime | Semitest | 2 | hr | 4 |
| 67 | ICL | metrology | photo | semZeiss | low-V scanning electron microscope | Zeiss Supra 40 | 9 | hr | 12 | |
| 68 | ICL | pkg | EML Metro | TMAH-KOHhood | wet bath | KOH & TMAH etching | fume hood | 25 | run | 32 |
| 69 | ICL | metrology | metrology | UV1280 | spectroscopic ellipsometer | measures film thickness (single, stacks, PR) | Tencor/Prometrix UV-1280 | 5 | hr | 10 |
| 70 | ICL | diffusion | diffusion | VTR | vertical thermal reactor | low-stress nitride | SVG/Thermco 7000 | 65 | run+70/um | 65 |
| 71 | ICL | metrology | metrology | wykoICL | non-contact profiler | surface topology; up to 500um vertical scan | Wyko NT3300 | 5 | hr | 10 |
| 72 | TRL | diffusion | diffusion | A1-GateOx | atmosph. diffusion tube | for gate oxide | MRL 718 | 25 | run+steam | 39 |
| 73 | TRL | diffusion | diffusion | A2-WetOxBond | atmosph. diffusion tube | wafer bonding | MRL 718 | 25 | run+steam | 39 |
| 74 | TRL | diffusion | diffusion | A3-Sinter | atmosph. diffusion tube | CMOS metal sintering | MRL 718 | 25 | run | 39 |
| 75 | TRL | diffusion | diffusion | A4-III-Vanneal | atmosph. diffusion tube | anneal III-Vs; has O2 | MRL 718 | 25 | run | 39 |
| 76 | TRL | wet | Etch Room | acid-hood | wet station | wet etch | Laminaire | 25 | run | 32 |
| 77 | TRL | wet | Ballroom | acid-hood2 | wet station | wet etching in 6.152J | 25 | run | 32 | |
| 78 | TRL | metal dep | metal'n | AJA-TRL | sputterer | Al, Cr, Cu, Au,Ag, Ti | AJA ATC | 30 | run+mat. | 37 |
| 79 | TRL | photo | metal'n | asherMatrix-TRL | plasma photoresist stripper (single-wafer) | Matrix 106 | 5 | run | 7 | |
| 80 | TRL | photo | Etch Room | asher-TRL | plasma photoresist stripper (2 chambers) | Branson | 5 | run | 7 | |
| 81 | TRL | diffusion | diffusion | B1-Au | atmosph. diffusion tube | gold exposure | MRL 718 | 25 | run+steam | 39 |
| 82 | TRL | diffusion | diffusion | B2-Ox-alloy-Poly | low pressure diffusion tube | LP diffusion tube; deps Poly-Si on Au wf | MRL 718 | 65 | run+70/um | 74 |
| 83 | TRL | diffusion | diffusion | B3-DryOx | atmosph. diffusion tube | annealing | MRL 718 | 25 | run | 39 |
| 84 | TRL | diffusion | diffusion | B4-Poly | low pressure diffusion tube | LPCVD polysilicon | MRL 718 | 65 | run+70/um | 74 |
| 85 | TRL | pecvd | 39-428 | CCNT | plasma dep chamber | deposits carbon nanotubes from acetylene | Aixtron | 7 | wafer | 14 |
| 86 | TRL | pecvd | EML pecvd-rie | CNT | plasma dep chamber | deposits carbon nanotubes from acetylene | Home-built | 7 | wafer | 14 |
| 87 | TRL | photo | photo | coater | spinner | coats PR | Solitec 5110 | 2 | wafer+mat | 10 |
| 88 | TRL | metrology | Ballroom | dek-NoAu | profilometer | measures surface roughness, no-gold wafers only | Sloan Dektak | 2 | hr | 4 |
| 89 | TRL | metrology | Ballroom | dektak | profilometer | measures surface roughness | Sloan Dektak II | 2 | hr | 4 |
| 90 | TRL | metal dep | metal'n | eBeamAu | metal evaporator | Au,Ag,Al,Cr,AuGe, Co,Pt,Si,Ti,Zr,W ,Er,Mo,SiO2,Ta, Pd,Ni,Ge,Sn | Temescal VES2550 | 30 | run+mat. | 37 |
| 91 | TRL | metal'n | 39-428 | eBeamFP | metal evaporator | Au,Al,Cr,Pt,Ti, | Temescal FC2000 | 30 | run+mat. | 37 |
| 92 | TRL | metrology | Ballroom | ellipsometer-TRL | ellipsometer | measures film thickness & index | Gaertner | 2 | hr | 4 |
| 93 | TRL | photo | photo | EV1 | mask aligner | contact, w/IR | Electronic Visions 620 | 6 | wafer | 9 |
| 94 | TRL | photo | photo | EV-LC | mask aligner | contact, w/IR | Electronic Visions 620 | 6 | wafer | 9 |
| 95 | TRL | photo | photo | EV501-620 | wafer aligner/bonder | aligns & bonds wafers (fusion,anodic,thermo-compression) | Electronic Visions | 6 | wafer | 9 |
| 96 | TRL | metrology | Ballroom | Filmetrics-TRL | thin film measurement system | measures film thickness | Filmetrics F-20 | 2 | hr | 4 |
| 97 | TRL | photo | photo | fluoroscope | to check for photoresist after developing | 1 | wafer | 3 | ||
| 98 | TRL | metrology | Etch Room | FLX | non-contact profiler | measures wafer bow | KLA-Tencor FLX | 5 | hr | 10 |
| 99 | TRL | photo | 39-430 | Heidelberg | direct-write laser | laser-writes on photoresist | Heidelberg DWL-66 | 10 | hr | 16 |
| 100 | TRL | photo | photo | hotplate1 | hotplate | for post & pre-baking SU8 & PZT at �300oC | 1 | wafer | 2 | |
| 101 | TRL | photo | photo | hotplate2 | hotplate | for post & pre-baking SU8 & PZT at �300oC | 1 | wafer | 2 | |
| 102 | TRL | photo | photo | hotplate300 | hi-T hotplate | for post & pre-baking SU8 & PZT at �400oC | 1 | wafer | 2 | |
| 103 | TRL | photo | photo | HMDS-TRL | bake oven | for hexamethyldisilazane (an adhesion promoter) | 0 | wafer | 10 | |
| 104 | TRL | metrology | test area | hp-probe | prober-tester | electrical characterization | Rucker/Kolls 1032-HP4062B | 2 | hr | 4 |
| 105 | TRL | metrology | Etch Room | IV-probe | curve tracer w/probe | measures IV characteristics | Tektronics | 2 | hr | 4 |
| 106 | TRL | metrology | test area | keithley | parametric tester | electrical characterization | Keithley 450S | 2 | hr | 4 |
| 107 | TRL | rie | Etch Room | LAM590-TRL | plasma etcher | for oxide [gases=CHF3,CF4,He,O2] | LAM 590 | 7 | wafer | 14 |
| 108 | TRL | photo | photo | MA-6 | mask aligner | contact, w/IR | Karl Suss MA-6 | 6 | wafer | 9 |
| 109 | TRL | metrology | photo | microscope-TRL | inspection microscope | w/Nomarski interference contrast | Nikon | 2 | hr | 4 |
| 110 | TRL | metrology | Ballroom | nanospec | thin film measurement system | measures film thickness | Nanometrics AFT 010-0180 | 2 | hr | 4 |
| 111 | TRL | deposition | Etch Room | parylene | parylene coater | coats wafers w/parylene | 5 | wafer | 10 | |
| 112 | TRL | wet | photo | photo-wet-Au | wet station | wet etch photoresist | Semifab WPS-800 | 25 | run | 32 |
| 113 | TRL | wet | photo | photo-wet-l | wet station | wet etch photoresist | Semifab WPS-800 | 25 | run | 32 |
| 114 | TRL | wet | photo | photo-wet-r | wet station | wet etch photoresist | Semifab WPS-800 | 25 | run | 32 |
| 115 | TRL | photo | photo | pispinner | polyimide spinner | coats wafers w/polyimide | Headway Research | 3 | wafer | 6 |
| 116 | TRL | rie | Etch Room | plasmaquest | ECR-RIE | etches dielectrics on III-Vs, polyimide, etc | Plasmaquest Series 11 Model 145 | 7 | wafer+thickness | 14 |
| 117 | TRL | photo | photo | PMMAspinner | PMMA spinner | coats wafers w/PMMA | 3 | wafer | 6 | |
| 118 | TRL | photo | photo | postbake | oven | to bake photoresist after developing | Blue DDC-146C | 0 | wafer | 3 |
| 119 | TRL | photo | photo | prebakeovn | oven | to bake photoresist before exposure | 0 | wafer | 3 | |
| 120 | TRL | spin dep | Etch Room | PZTcoater | PZT coater | deposits PZT | Specialty Coating Systems, Spin Coater 6700 Series | 5 | wafer | 10 |
| 121 | TRL | spin dep | Etch Room | PZTfurnace | PZT furnace | anneals PZT | Thermolyne Furnace, 6000 | 5 | run | 7 |
| 122 | TRL | diffusion | Etch Room | rca-TRL | wet station | RCA clean | 25 | run | 39 | |
| 123 | TRL | photo | EMLmetrology | Resonetics | laser ablation system | laser-writes on photoresist, glass, plastic | Resonetics | 10 | hr | 14 |
| 124 | TRL | diffusion | Etch Room | rta | rapid thermal annealer | not CMOS-compatible | AG Associates 210T-02 | 4 | wafer | 5 |
| 125 | TRL | diffusion | Etch Room | rta35 | rapid thermal annealer | for III-Vs | AG Associates Heatpulse 410 | 4 | wafer | 5 |
| 126 | TRL | rie | Etch Room | SAMCO | ICP-RIE | etches dielectrics on III-Vs | SAMCO 200iP | 7 | wafer+thickness | 14 |
| 127 | TRL | wet | DUV | Solvent-noAu | wet station | wet solvent for non-Au wafers | 25 | run | 32 | |
| 128 | TRL | wet | DUV | Solvent-hood | wet station | wet solvent for non-Au wafers | 25 | run | 32 | |
| 129 | TRL | plasma etch | Etch Room | sts1 | Si deep trench etcher | etches deep features in Si (4" wafers) | STS/Multiplex ICP non-MESC | 15 | wafer+thickness | 30 |
| 130 | TRL | plasma etch | Etch Room | sts2 | Si deep trench etcher | etches deep features in Si (6" wafers) | STS/Multiplex ICP MESC | 15 | wafer+thickness | 30 |
| 131 | TRL | plasma etch | Etch Room | sts3 | Si deep trench etcher | etches deep features in Si (6" wafers) | STS/Multiplex ICP MESC | 15 | wafer+thickness | 30 |
| 132 | TRL | pecvd | diffusion | sts-CVD | dielectric plasma dep | deposits oxide, nitride, Si carbide | STS/Multiplex PECVD | 7 | wafer+thickness | 14 |
| 133 | TRL | photo | photo | SU8oven | oven | to bake SU8 | 0 | wafer | 0 | |
| 134 | TRL | photo | photo | SU8spinner | oven | to coat with SU8 | 3 | wafer+mat | 6 | |
| 135 | TRL | metrology | Ballroom | TBM-8 | alignment measurement tool | Electronic Visions | 2 | hr | 4 | |
| 136 | TRL | Etch | Etch Room | UVozone-Au | ozone clean plate | removes organics w/ozone created by UV light | 2 | hr | 4 | |
| 137 | TRL | Etch | Etch Room | UVozone-noAu | ozone clean plate | removes organics w/ozone created by UV light | 2 | hr | 4 | |
| 138 | TRL | photo | photo | varTemp | oven | to bake photoresist; temp can be cahnged | 0 | wafer | 0 | |
| 139 | TRL | metrology | Etch Room | WYKO | non-contact profiler | surface topology; up to 500um vertical scan | Wyko NT9800 | 5 | hr | 10 |
| 140 | TRL | Etch | Etch Room | XeF2 | XeF2 vapor system | etches Si w/XeF2 for structural release | 20 | hr | 25 |