FIgure 2

Figure 2: Simulated thermal resistance versus the top open surface area of the U-groove for growing CNTs. The thermal resistance is normalized to the thermal resistance of the silicon substrate with a 500-nm thick silicon monoxide layer on the surface, 12.9 K/W. The surface area is normalized to the area of heat source, 300µm by 300 µm. The depth is normalized to the thickness of silicon substrate, 200µm.

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