Figure 1

Figure 1: GaAsOI fabrication process in this work: 1) Preparation of the bonding substrates: thermally oxidized Si handle wafer and GaAs donor wafer with GaAs/Ge/GaAs epitaxial stack covered with PECVD oxide. Si: dark grey, SiO2: light grey, GaAs: blue, Ge: dark yellow. 2) Low-temperature wafer bonding and room temperature spontaneous etching with XeF2 gas-removing sacrificial Ge layer. 3) After separation, GaAsOI on Si substrate and reclaimed GaAs donor substrate.

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    Akintunde Akinwande Anantha Chandrakasan Brian Wardle Carlijn Mulder Carl Thompson Caroline Ross Charles Sodini Chih-Hao Chang CICS Clifton Fonstad Dana Weinstein Dimitri Antoniadis Duane Boning Eugene Fitzgerald Faraz Najafi Francesco Marsili George Barbastathis Hae-Seung Lee Harry Tuller Ichiro Masaki Jason Sussman Jeffrey Lang Jesus del Alamo Jing Kong Joel Dawson Joel Voldman Jongyoon Han Judy Hoyt Karen Gleason Karl Berggren Lan Wei Luca Daniel Luis Velásquez-García Marc Baldo Omar Mysore Philip Reusswig Rajeev Ram Sang-Gook Kim Sangeeta Bhatia Scott Manalis Sean Bishop Tomas Palacios Vitor Manfrinato Vladimir Bulovic Vladimir Stojanovic