Figure 2
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Figure 2: Change in device resistance of a 100-nm-thick, 300-nm-wide Au line sensor upon exposure to 500 ppm of nitrobenzene. The concentration was increased to 650 ppm at t=15 mins.
Figure 2: Change in device resistance of a 100-nm-thick, 300-nm-wide Au line sensor upon exposure to 500 ppm of nitrobenzene. The concentration was increased to 650 ppm at t=15 mins.