Entries tagged with Dimitri Antoniadis

• A Self-aligned InGaAs Quantum-well Field-effect Transistor for Logic Applications

  • InGaAs is a promising candidate for channel material for future high-performance CMOS logic applications because of its superior electron transport…

• Circuit Simulation Using a Verilog-A Implementation of the Virtual-source Transistor Model

  • A variety of compact MOSFET models are used for circuit simulation in both industry and academia, ranging from standard industrial…

• Hole Mobility in Strained-Ge p-MOSFETs with High-k/Metal Gate Stack

  • The need for high speed and density in modern integrated circuits requires new MOSFET channel materials, techniques for improved carrier…

• Energy-delay Trade-off for Devices with Asymmetric n-type and p-type Current Drives from a Static-CMOS Circuit-level Perspective

  • Historically, digital logic devices are benchmarked by the on-state current (Ion) at specified off-state current (Ioff) and supply voltage (Vdd)…

• Valence Band Offset Extraction Between Strained-Si and Strained-Ge Layers

  • The type-II band alignment between strained-silicon (s-Si) and strained-germanium (s-Ge) has been proposed for use in tunneling transistors due to…

• Compact Physical Modeling of Graphene Field Effect Transistors

  • Graphene is a two-dimensional (2D) material that has attracted great interest for electronic devices since the demonstration of field effect…

• Dimitri A. Antoniadis

  • Fabrication, measurements and modeling of silicon- and germanium-based devices for high-speed and low-power integrated circuits.

• Virtual-source-based Self-consistent Charge and Transport Models for Ballistic MOSFETs

  • Compact models describing the voltage-dependent terminal current and charges (or equivalently, capacitances) are essential for small-signal and transient circuit simulation. …