InGaAs is a promising candidate for channel material for future high-performance CMOS logic applications because of its superior electron transport…
A variety of compact MOSFET models are used for circuit simulation in both industry and academia, ranging from standard industrial…
The need for high speed and density in modern integrated circuits requires new MOSFET channel materials, techniques for improved carrier…
Historically, digital logic devices are benchmarked by the on-state current (Ion) at specified off-state current (Ioff) and supply voltage (Vdd)…
The type-II band alignment between strained-silicon (s-Si) and strained-germanium (s-Ge) has been proposed for use in tunneling transistors due to…
Graphene is a two-dimensional (2D) material that has attracted great interest for electronic devices since the demonstration of field effect…
Fabrication, measurements and modeling of silicon- and germanium-based devices for high-speed and low-power integrated circuits.
Compact models describing the voltage-dependent terminal current and charges (or equivalently, capacitances) are essential for small-signal and transient circuit simulation. …