Front-end integration of III-V compound semiconductor devices with Si metal-oxide-semiconductor (MOS) technology requires the development of commercially viable engineered substrates…
We are developing materials for thermoelectric and thermophotovoltaics applications. Our objective is to develop III-V and/or IV superlattices with low…
Monolithic integration of III-V devices with Si CMOS technology allows us to combine the unique capabilities of III-V devices with…
Photovoltaics and sustainability have received a lot of attention lately. We seek a tandem photovoltaic device using silicon as both…
This paper discusses a way to optimize the In0.53Ga0.47As quantum-well MOSFET structures from the prospective of channel mobility. We experimentally…
Materials and devices: lattice-mismatched materials, III-V’s, IV’s, dielectrics; deposition including MOCVD; innovation and commercialization