Entries tagged with Jesus del Alamo

• A Self-aligned InGaAs Quantum-well Field-effect Transistor for Logic Applications

  • InGaAs is a promising candidate for channel material for future high-performance CMOS logic applications because of its superior electron transport…

• Nano-scale Metal Contacts for Future III-V CMOS

  • The scaling of MOSFETs in recent years has pushed the gate length down to less than 20 nanometers.  Further gate…

• High Voltage Degradation of GaN HEMTs for Power-switching Applications

  • The GaN high-electron-mobility transistor (HEMT) is a very promising device for power-switching applications due to the outstanding material properties of…

• A Self-aligned Gate Technology for InGaAs Quantum-well Field-effect Transistors

  • As conventional Si CMOS scaling approaches the end of the roadmap, III-V based field-effect transistors appear as an increasingly viable…

• Hole Mobility Enhancement in III-V FETs through Uniaxial Strain

  • In Si p-type metal-oxide-semiconductor field-effect transistors (MOSFETs), the incorporation of mechanical strain in the channel has greatly enhanced hole velocity…

• Transistors with Steep Subthreshold Characteristics Based on Impact Ionization on Narrow Bandgap Semiconductors

  • Achieving a sharp subthreshold swing is crucial to enable the supply voltage scaling that is necessary for reducing power consumption…

• Jesús A. del Alamo

  • Microelectronics device technologies for gigahertz and gigabit-per-second communication systems: physics, modeling, technology and design. InGaAs and InAs MOSFETs as a post-CMOS semiconductor logic technology. Reliability of GaN transistors. Technology and pedagogy of online laboratories for engineering education.