InGaAs is a promising candidate for channel material for future high-performance CMOS logic applications because of its superior electron transport…
The scaling of MOSFETs in recent years has pushed the gate length down to less than 20 nanometers. Further gate…
The GaN high-electron-mobility transistor (HEMT) is a very promising device for power-switching applications due to the outstanding material properties of…
As conventional Si CMOS scaling approaches the end of the roadmap, III-V based field-effect transistors appear as an increasingly viable…
In Si p-type metal-oxide-semiconductor field-effect transistors (MOSFETs), the incorporation of mechanical strain in the channel has greatly enhanced hole velocity…
Achieving a sharp subthreshold swing is crucial to enable the supply voltage scaling that is necessary for reducing power consumption…
Microelectronics device technologies for gigahertz and gigabit-per-second communication systems: physics, modeling, technology and design. InGaAs and InAs MOSFETs as a post-CMOS semiconductor logic technology. Reliability of GaN transistors. Technology and pedagogy of online laboratories for engineering education.