Entries tagged with Judy Hoyt

• Hole Mobility in Strained-Ge p-MOSFETs with High-k/Metal Gate Stack

  • The need for high speed and density in modern integrated circuits requires new MOSFET channel materials, techniques for improved carrier…

• Integration of Small Organic Molecules in Flash Memory Devices

  • As demands for high storage density, high chip memory capacity, and decreasing process costs continue to mount, conventional flash memory…

• Uniaxial Strained Ge for Non-planar p-MOSFETs

  • Uniaxial strained Ge “nanobars” are of interest for future sub-10-nm gate length p-MOSFETs because of the excellent electrostatic control afforded…

• The Effect of a Nitrogen Anneal on the Dark Current of Ge Photodiodes

  • Germanium is a promising candidate for use in CMOS-compatible photodiodes.  Its strong absorption in the 1.55-µm range and relative ease…

• Valence Band Offset Extraction Between Strained-Si and Strained-Ge Layers

  • The type-II band alignment between strained-silicon (s-Si) and strained-germanium (s-Ge) has been proposed for use in tunneling transistors due to…

• Judy L. Hoyt

  • Fabrication and device physics of silicon-based heterostructures and nanostructures. High mobility Si and Ge-channel MOSFETs, nanowire FETs, novel transistor structures, silicon based photovoltaics, and silicon-germanium photodetectors for electronic/photonic integrated circuits.