The need for high speed and density in modern integrated circuits requires new MOSFET channel materials, techniques for improved carrier…
As demands for high storage density, high chip memory capacity, and decreasing process costs continue to mount, conventional flash memory…
Uniaxial strained Ge “nanobars” are of interest for future sub-10-nm gate length p-MOSFETs because of the excellent electrostatic control afforded…
Germanium is a promising candidate for use in CMOS-compatible photodiodes. Its strong absorption in the 1.55-µm range and relative ease…
The type-II band alignment between strained-silicon (s-Si) and strained-germanium (s-Ge) has been proposed for use in tunneling transistors due to…
Fabrication and device physics of silicon-based heterostructures and nanostructures. High mobility Si and Ge-channel MOSFETs, nanowire FETs, novel transistor structures, silicon based photovoltaics, and silicon-germanium photodetectors for electronic/photonic integrated circuits.