Entries tagged with Tomas Palacios

• Synthesis of One- to Two-layer Hexagonal Boron Nitride Using Chemical Vapor Deposition

  • Hexagonal boron nitride (hBN) is very attractive for a variety of applications, particularly as deep ultraviolet emitter, transparent membrane, dielectric…

• Top-down Fabrication of N-face GaN/AlGaN Nanowire HEMTs

  • The high-frequency performance of Ga-face AlxGa1–xN/GaN high electron mobility transistors (HEMTs) has rapidly increased in recent years, enabling use of…

• Heterogeneous Integration of GaN and Si Devices

  • Gallium nitride (GaN) is a wide bandgap semiconductor with unsurpassed properties for high voltage switches and RF amplifiers. However, in…

• Gate Recessed Technology for Normally-off GaN Transistors

  • AlGaN/GaN high electron mobility transistors (HEMTs) have attracted a great interest for the next generation of power electronics due to…

• Graphene-based Chemical and Biological Sensors

  • Thanks to its all-surface 2D structure combined with a very high carrier mobility, graphene is a very promising candidate for…

• GaN for Low Voltage Power Electronics

  • GaN-based transistors have outstanding properties for the development of ultra-high efficiency and compact power electronics.  The high electron mobility in…

• Low Temperature Gate Dielectric Deposition for Recessed AlGaN/GaN MIS-HEMTs

  • The use of gate dielectrics in AlGaN/GaN high electron mobility transistors (MIS-HEMTs) is attracting great interest for power applications since…

• 1.8-kV-breakdown AlGaN/GaN HEMT on Si Substrate

  • The combination of high critical electric field, carrier mobility and thermal stability makes GaN an ideal semiconductor for power switches…

• Graphene Ambipolar Electronics for RF Applications

  • Graphene is a one-atom-thick layer of carbon atoms arranged in a honeycomb lattice through sp2 bonding [1] . Considered for…

• Compact Physical Modeling of Graphene Field Effect Transistors

  • Graphene is a two-dimensional (2D) material that has attracted great interest for electronic devices since the demonstration of field effect…

• High-speed Graphene Circuits and Photodetectors

  • The most common substrate for processing chemical vapor deposition (CVD) graphene and highly oriented pyrolytic graphite (HOPG) has been thermally…

• Tomás Palacios

  • Design, fabrication and characterization of novel electronic devices in wide bandgap semiconductors and graphene; polarization and bandgap engineering; transistors for sub-mm wave power and digital applications; new ideas for power conversion and generation; interaction of biological systems with semiconductor materials and devices; nanowires and graphene–based transistors.

• MIT-MTL Center for Graphene Devices and Systems

  • The MIT/MTL Center for Graphene Devices and Systems (MIT-CG) brings together, MIT researchers and industrial partners to advance the science…

• GaN High Frequency Transistors

  • GaN-based high electron mobility transistors (HEMTs) have great potential for high power/frequency applications due to their outstanding combination of large…