Hexagonal boron nitride (hBN) is very attractive for a variety of applications, particularly as deep ultraviolet emitter, transparent membrane, dielectric…
The high-frequency performance of Ga-face AlxGa1–xN/GaN high electron mobility transistors (HEMTs) has rapidly increased in recent years, enabling use of…
Gallium nitride (GaN) is a wide bandgap semiconductor with unsurpassed properties for high voltage switches and RF amplifiers. However, in…
AlGaN/GaN high electron mobility transistors (HEMTs) have attracted a great interest for the next generation of power electronics due to…
Thanks to its all-surface 2D structure combined with a very high carrier mobility, graphene is a very promising candidate for…
GaN-based transistors have outstanding properties for the development of ultra-high efficiency and compact power electronics. The high electron mobility in…
The use of gate dielectrics in AlGaN/GaN high electron mobility transistors (MIS-HEMTs) is attracting great interest for power applications since…
The combination of high critical electric field, carrier mobility and thermal stability makes GaN an ideal semiconductor for power switches…
Graphene is a one-atom-thick layer of carbon atoms arranged in a honeycomb lattice through sp2 bonding [1] . Considered for…
Graphene is a two-dimensional (2D) material that has attracted great interest for electronic devices since the demonstration of field effect…
The most common substrate for processing chemical vapor deposition (CVD) graphene and highly oriented pyrolytic graphite (HOPG) has been thermally…
Design, fabrication and characterization of novel electronic devices in wide bandgap semiconductors and graphene; polarization and bandgap engineering; transistors for sub-mm wave power and digital applications; new ideas for power conversion and generation; interaction of biological systems with semiconductor materials and devices; nanowires and graphene–based transistors.
The MIT/MTL Center for Graphene Devices and Systems (MIT-CG) brings together, MIT researchers and industrial partners to advance the science…
GaN-based high electron mobility transistors (HEMTs) have great potential for high power/frequency applications due to their outstanding combination of large…