Figure 1

Figure 1: Dark current as a function of voltage for different annealing temperatures for a 10- x 10-μm device.  The anneal reduces the dark current by ~1000X.  The inset shows a cross-sectional schematic diagram of the Ge-on-Si photodiode.

Figure 1: Dark current as a function of voltage for different annealing temperatures for a 10- x 10-μm device. The anneal reduces the dark current by ~1000X. The inset shows a cross-sectional schematic diagram of the Ge-on-Si photodiode.