Figure 1
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Figure 1: Sentaurus simulation of strain relaxation of a strained Ge nanobar on a Si0.5Ge0.5 virtual substrate. The transverse strain is minimal on the surface of the nanobar while longitudinal stress is maintained.
Figure 1: Sentaurus simulation of strain relaxation of a strained Ge nanobar on a Si0.5Ge0.5 virtual substrate. The transverse strain is minimal on the surface of the nanobar while longitudinal stress is maintained.