Figure 1

Figure 1: Sentaurus simulation of strain relaxation of a strained Ge nanobar on a Si0.5Ge0.5 virtual substrate.  The transverse strain is minimal on the surface of the nanobar while longitudinal stress is maintained.

Figure 1: Sentaurus simulation of strain relaxation of a strained Ge nanobar on a Si0.5Ge0.5 virtual substrate. The transverse strain is minimal on the surface of the nanobar while longitudinal stress is maintained.