Figure 1
- Category:
Print This Page
Download as PDF
Figure 1: C-V curve of experimental and simulation data of the structure shown in Figure 2. The simulation data is fitted by adjusting the valence offset and effective band gap between the s-Si and s-Ge layers. Regions I, II, III, and IV correspond to hole accumulation in the s-Si, hole accumulation in the s-Ge, hole depletion from the s-Ge, and electron inversion in the s-Si, respectively.