MTL Annual Research Report 2012

1] . The red dotted line in the schematic indicates the location of the δ doping layer, and the channel consists of a composite of InGaAs and InAs. In the simulations shown in Figure 2, a channel of 5-nm InAs was used." />

1. D. Jin, D.-H. Kim, T.-W. Kim and J. A. del Alamo, "Quantum capacitance in scaled down III-V FETs," in IEEE Int. Electron Devices Meeting, Baltimore, MD, 2009, pp. 495-498. [↩]