chern_pmosfets_02

Figure 2: Transfer characteristics of a strained-Ge trigate with 500, 18nm-wide nanowires in parallel and a gate length of 10um. The sweeps are -50mV (black) and -1V (red). The SS for the device is 83mV/dec, and the hysteresis is ~40mV. The inset illustrates the device schematic.

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    ahmed al-obeidi akintunde akinwande anantha chandrakasan brian wardle carl thompson caroline ross center for excitonics charles sodini clifton fonstad dana weinstein dimitri antoniadis duane boning eugene fitzgerald farnaz niroui frances hill gallium nitride gang chen graphene hae-seung lee harry tuller healthcare iii-v materials jeffrey lang jesús del alamo jing kong joel voldman jongyoon han judy l. hoyt karl berggren lionel kimerling luca daniel luis velasquez-garcia marc baldo mildred dresselhaus pablo jarillo-herrero pao lin patrick brown qing hu sang-gook kim silvija gradecak tomas palacios vladimir bulovic vladimir stojanovic yu-chung hsiao zohaib mahmood