yang_arrays_02

Figure 2: (a) Fabrication process of the gold optical-field emitters. The process starts from a Si wafer. A thin SiO2 layer is grown, preventing electron emission from bulk Si. Electron beam lithography and etching produces a patterned oxide layer. Au deposition and PMMA lift-off allows creation of Au “bullet” arrays. The aspect-ratio of the emitters depends on the Au deposition time. The Si substrate can be electrically grounded to serve as an electron reservoir, or connected to a DC bias to perform electron emission induced by a combination of electrostatic field and optical field stimulation. (b) SEM image of a Au dot array. An oxide layer was not deposited on this sample and the gold dots (aspect-ratio of 1) are deposited directly on the Si wafer. The diameter of each gold dot is 10 nm and the dot pitch is 30 nm. A total of 100 Au dots are packed within an area of less than 0.1 μm2.

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    ahmed al-obeidi akintunde akinwande anantha chandrakasan brian wardle carl thompson caroline ross center for excitonics charles sodini clifton fonstad dana weinstein dimitri antoniadis duane boning eugene fitzgerald farnaz niroui frances hill gallium nitride gang chen graphene hae-seung lee harry tuller healthcare iii-v materials jeffrey lang jesús del alamo jing kong joel voldman jongyoon han judy l. hoyt karl berggren lionel kimerling luca daniel luis velasquez-garcia marc baldo mildred dresselhaus pablo jarillo-herrero pao lin patrick brown qing hu sang-gook kim silvija gradecak tomas palacios vladimir bulovic vladimir stojanovic yu-chung hsiao zohaib mahmood