jin_GaN-final_01

Figure 1: RON transients from 200 ns up to 10,000 s on wafer A and B devices from VGSQ=-5 V, VDSQ=40 V. Blue lines are obtained from pulsed IV system (Auriga AU4750) and red lines from semiconductor device analyzer (Agilent B1500A). Also shown are the DC values of RON obtained after fully detrapping the device.

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    ahmed al-obeidi akintunde akinwande anantha chandrakasan brian wardle carl thompson caroline ross center for excitonics charles sodini clifton fonstad dana weinstein dimitri antoniadis duane boning eugene fitzgerald farnaz niroui frances hill gallium nitride gang chen graphene hae-seung lee harry tuller healthcare iii-v materials jeffrey lang jesús del alamo jing kong joel voldman jongyoon han judy l. hoyt karl berggren lionel kimerling luca daniel luis velasquez-garcia marc baldo mildred dresselhaus pablo jarillo-herrero pao lin patrick brown qing hu sang-gook kim silvija gradecak tomas palacios vladimir bulovic vladimir stojanovic yu-chung hsiao zohaib mahmood