piedra_ganpowerelectronics_01.jpg

Figure 1: (a) Transfer characteristics of a tri-gate normally-off GaN MISFET and a standard planar-gate D-mode GaN MIS-HEMT. Both devices have Lgs = 1.5 μm, Lg = 2 μm, Lgd = 10 μm and W = 100 μm. (b) Three-terminal breakdown voltage (BV) measurement of the tri-gate normally-off GaN MISFET with Lgd = 10 μm at Vgs = 0 V.

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