piedra_ganpowerelectronics_02.jpg

Figure 2: (a) Id-Vd characteristic of a multifinger device with Wg = 39.6 mm and Ron = 0.244 Ω. (b) Three-terminal breakdown voltage as a function of Lgd for implantation and mesa devices. The inset shows the breakdown voltage at leakage current of 10 μA/mm

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