polyzoeva_mosfets_01

Figure 1: Hole mobility of previously fabricated strained-Ge devices with and without a Si cap with enhancement factors up to 4.7x compared to universal Si/SiO2 hole mobility. The inset shows the cross section of the capped device. An increase in the enhancement factor is expected for an improved dielectric/semiconductor interface offered by the bilayer dielectric system.

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    ahmed al-obeidi akintunde akinwande anantha chandrakasan brian wardle carl thompson caroline ross center for excitonics charles sodini clifton fonstad dana weinstein dimitri antoniadis duane boning eugene fitzgerald farnaz niroui frances hill gallium nitride gang chen graphene hae-seung lee harry tuller healthcare iii-v materials jeffrey lang jesús del alamo jing kong joel voldman jongyoon han judy l. hoyt karl berggren lionel kimerling luca daniel luis velasquez-garcia marc baldo mildred dresselhaus pablo jarillo-herrero pao lin patrick brown qing hu sang-gook kim silvija gradecak tomas palacios vladimir bulovic vladimir stojanovic yu-chung hsiao zohaib mahmood