manfrinato_lithography_01

Figure 1: Bright field transmission electron micrographs HSQ structures exposed at 200 keV. The HSQ thickness was 10-15 nm and it was on top of a 10-nm-thick Si3N4 membrane. The linear-dose was 30 nC/cm (20,000 electrons/nm). The exposure step size was 1-2 nm. (A), (B), and (C) show the minimum feature sizes obtained by this method. (D) shows an isolated 3-nm-wide structure over a micron long. (E) and (F) show 10- and 5-nm-half-pitch dot array of HSQ. The doses were 15 and 9 fC/dot, respectively.

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    ahmed al-obeidi akintunde akinwande anantha chandrakasan brian wardle carl thompson caroline ross center for excitonics charles sodini clifton fonstad dana weinstein dimitri antoniadis duane boning eugene fitzgerald farnaz niroui frances hill gallium nitride gang chen graphene hae-seung lee harry tuller healthcare iii-v materials jeffrey lang jesús del alamo jing kong joel voldman jongyoon han judy l. hoyt karl berggren lionel kimerling luca daniel luis velasquez-garcia marc baldo mildred dresselhaus pablo jarillo-herrero pao lin patrick brown qing hu sang-gook kim silvija gradecak tomas palacios vladimir bulovic vladimir stojanovic yu-chung hsiao zohaib mahmood