teherani_extraction_02

Figure 2: Simulated quasi-static capacitance-voltage curve of an ideal InAs/GaSb heterostructure MOS-capacitor with no interface traps. The peak capacitance at negative voltage provides the equivalent oxide thickness (EOT), and is related to the width between the accumulation and inversion regimes of the CV. As EG,eff  becomes smaller, so too does the width between the regimes. The detailed shape of the capacitance-voltage curve for positive voltages is due to electron sub-bands in the InAs layer and will likely be obscured by Dit  in the experimental measurement.

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