InGaAs-based metal-oxide-semiconductor field-effect transistors (MOSFETs) have shown great potential for future high- performance and low-power logic applications [1] . Superior…
Fabrication, measurements and modeling of silicon- and germanium-based devices for high-speed and low-power integrated circuits.
Significant reduction in processor power is needed in order to sustain future data center growth and extend battery life of…
Strained-Ge MOSFETs with significantly enhanced mobility compared to Si/SiO2 hole mobility have previously been reported by our group (see Figure…
Compact models for GaN based HEMTs describing the voltage-dependent terminal currents are essential for circuit simulations. In this work, we…