Entries tagged with feng gao

• Use of in-situ SiN_x to Reduce the OFF-state Degradation of AlGaN/GaN HEMTs

  • Thanks to their excellent electrical performance, AlGaN/GaN high electron mobility transistors (HEMTs) are considered ideal devices for the next generation…

• Reliability Studies of AlGaN/GaN HEMTs

  • There is an increasing interest in AlGaN/GaN high electron mobility transistors (HEMTs) due to their great potential for high performance…