Entries tagged with gallium nitride

• Use of in-situ SiN_x to Reduce the OFF-state Degradation of AlGaN/GaN HEMTs

  • Thanks to their excellent electrical performance, AlGaN/GaN high electron mobility transistors (HEMTs) are considered ideal devices for the next generation…

• Impact of Metal-induced Strain in InAlN/GaN Nanoribbons

  • Nitride transistors with current gain cut-off frequencies (fT) of 300 GHz and power gain cut-off frequencies (fmax) of 394 GHz…

• Reliability Studies of AlGaN/GaN HEMTs

  • There is an increasing interest in AlGaN/GaN high electron mobility transistors (HEMTs) due to their great potential for high performance…

• GaN-Based Transistors for Power Electronic Applications

  • Wide band-gap III-nitride semiconductors have great potential for the next generation of power electronics. GaN high-electron-mobility transistors (HEMTs) in particular…

• 300-GHz GaN Transistors

  • The unique combination of high electron velocity and high breakdown voltage of GaN makes this material an ideal candidate for…

• Technology Development for GaN and Si Integration

  • GaN is an excellent material to be used in high-power, high-frequency and high-temperature applications due to its wide band gap,…

• LED Lighting System using Gallium Nitride FETs

  • This work focuses on using gallium nitride (GaN) FETs for an LED lighting system. The idea is to utilize the…