InGaAs-based metal-oxide-semiconductor field-effect transistors (MOSFETs) have shown great potential for future high- performance and low-power logic applications [1] . Superior…
Compound semiconductor transistor technologies for RF, microwave and millimeter wave applications. Nanometer-scale III-V compound semiconductor transistors for future digital applications. Technology and pedagogy of online laboratories for engineering education.
There is an increasing interest in AlGaN/GaN high electron mobility transistors (HEMTs) due to their great potential for high performance…
Achieving a sharp subthreshold swing is crucial to enable the supply voltage scaling that is necessary to reducing power consumption…
As CMOS technology continues to scale to the nanometer regime, there has been a strong demand for alternative materials to…
In the last few years, the development of energy-efficient electrical power management systems has received a great deal of interest….
As silicon MOSFETs approach the limits of their capabilities, III-V field-effect transistors show promise to replace them. The low-effective mass…
Deeply scaled III-V MOSFETs have demonstrated logic performance at 0.5 V, exceeding that of Si [1] . The gate length…