Semiconductor devices. Fabrication and device physics of silicon-based heterostructures and nanostructures. High mobility Si and Ge-channel MOSFETs, nanowire FETs, novel transistor structures, silicon based photovoltaics, and silicon-germanium photodetectors for electronic/photonic integrated circuits.
With the rapid downscaling of CMOS technology, III-V materials have gained much attention due to their high electron mobility. In…
Uniaxial strained Ge “nanobars” are of interest for future sub-10nm gate length p-MOSFETs because of the excellent electrostatic control afforded…
Significant reduction in processor power is needed in order to sustain future data center growth and extend battery life of…
Strained-Ge MOSFETs with significantly enhanced mobility compared to Si/SiO2 hole mobility have previously been reported by our group (see Figure…