Entries tagged with mohamed azize

• Impact of Metal-induced Strain in InAlN/GaN Nanoribbons

  • Nitride transistors with current gain cut-off frequencies (fT) of 300 GHz and power gain cut-off frequencies (fmax) of 394 GHz…

• Stress State Characterization of InAlN/GaN Nanoribbon HEMT Structures using Convergent Beam Electron Diffraction

  • GaN-based high electron mobility transistors (HEMTs) are an important platform for the realization of high-power, high-frequency devices.  Nanoribbon (NR) HEMT…