InGaAs-based metal-oxide-semiconductor field-effect transistors (MOSFETs) have shown great potential for future high- performance and low-power logic applications ^[1] .  Superior electron transport properties ^[2] and impressive device prototypes have been recently demonstrated ^{[3] [4]} . The parasitic resistance is an important problem to address, especially in deeply scaled devices. In addition, the gate-contact separation has to be kept to a minimum to achieve the device footprint goals. We address these requirements by introducing a novel transistor architecture with self-aligned contacts and a gate-last fabrication scheme.

In this work, self-aligned InGaAs quantum-well MOSFETs in the sub-100-nm regime have been demonstrated.  A cross- sectional SEM image of a device with gate length of 90 nm is shown in Figure 1. As shown, the S/D metal (Mo) and the n⁺ cap are self-aligned to the gate. With an optimized recess etch process, the device has achieved a very tight S/D-to-channel spacing (L_side < 20 nm). The channel consists of an InGaAs quantum well buried under a thin InP layer. A composite dielectric consisting of thin layers of Al₂O₃ and HfO₂ is grown by atomic layer deposition (ALD).  Well-behaved output characteristics are shown in Figure 2 for a 90-nm-gate length device. The total on-resistance of this device at V_gs-V_t= 0.7 V is 595 W.mm which is an excellent value. The subthreshold swing for a 60-nm-gate device at V_ds = 0.5 V is 120 mV/dec. The gate current is below 3×10^-3 A/cm² at the maximum operating voltage (V_gs-V_t =0.7 V). The process yields devices with gate lengths down to 30 nm with acceptable parasitic resistance. This self-aligned architecture will enable us to explore the scaling behavior and electron transport characteristics of InGaAs QW-MOSFETs in a dimensional range of interest for future CMOS.

1. J. A. del Alamo, “Nanometer-scale electronics with III-V compound semiconductors,” Nature, vol. 479, pp. 317-323, 2011.
2. D.-H. Kim, B. Brar and J. A. del Alamo, “f_T = 688 GHz and f_max = 800 GHz in L_g = 40 nm In_0.7Ga_0.3As MHEMTs with g_{m_max} > 2.7 mS/μm,” IEDM Tech. Dig., 2011, p. 319.
3. M. Egard, L. Ohlsson, B. M. Borg, F. Lenrick, R. Wallenberg, L.-E. Wernersson, and E. Lind, “High ransconductance self-aligned gate-last surface channel In_0.53Ga_0.47As MOSFET” in IEDM Tech. Dig., 2011, pp. 304.
4. M. Radosavljevic, B. Chu-Kung, S. Corcoran, G. Dewey, M. K. Hudait, J. M. Fastenau, J. Kavalieros, W. K. Liu, D. Lubyshev, M. Metz, K. Millard, N. Mukherjee, W. Rachmady, U. Shah, and R. Chau, “Advanced high-K gate dielectric for high-performance short-channel In_0.7Ga_0.3As auantum well field effect transistors on silicon substrate for low power logic applications,” in IEDM Tech. Dig., 2009, pp. 319.