lee_ganhemts_01

Figure 1: (a) (left) Simplified schematic cross-sectional view and (right) SEM cross-sectional view of fabricated hybrid wafer. (b) (left) Photograph of a 4-inch hybrid wafer with fabricated GaN-Si devices. (right) Optical micrograph of a Si PMOSFET (Lg=2 μm, W=4 μm) and an AlGaN/GaN HEMT (Lg=2 μm, W=20 μm) fabricated in close proximity.

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    ahmed al-obeidi akintunde akinwande anantha chandrakasan brian wardle carl thompson caroline ross center for excitonics charles sodini clifton fonstad dana weinstein dimitri antoniadis duane boning eugene fitzgerald farnaz niroui frances hill gallium nitride gang chen graphene hae-seung lee harry tuller healthcare iii-v materials jeffrey lang jesús del alamo jing kong joel voldman jongyoon han judy l. hoyt karl berggren lionel kimerling luca daniel luis velasquez-garcia marc baldo mildred dresselhaus pablo jarillo-herrero pao lin patrick brown qing hu sang-gook kim silvija gradecak tomas palacios vladimir bulovic vladimir stojanovic yu-chung hsiao zohaib mahmood